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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-3 package *High collector current *Low saturation voltage APPLICATIONS *For high voltatge ,high speed power switching applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPTION
2SC3528
Fig.1 simplified outline (TO-3) and symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 20 30 6 125 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A ;L=25mH IC=10A; IB=2A IC=10A; IB=2A VCB=500V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V;f=1.0MHz 15 10 MIN 400
2SC3528
SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT
TYP.
MAX
UNIT V
1.0 1.5 0.1 0.1
V V mA mA
15
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=10A; IB1=-IB2=2.0A VCC=125V 1.0 2.5 1.0 s s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3528
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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